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| FLC107WG C-Band Power GaAs FET FEATURES * High Output Power: P1dB = 30.0dBm(Typ.) * High Gain: G1dB = 8.0dB(Typ.) * High PAE: add = 36%(Typ.) * Proven Reliability * Hermetic Metal/Ceramic Package DESCRIPTION The FLC107WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 7.5 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed +10 volts. 2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with gate resistance of 500. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Symbol IDSS gm Vp VGSO P1dB G1dB add Rth Channel to Case VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 8 GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 250mA VDS = 5V, IDS = 20mA IGS = -20A Min. -1.0 -5 28.5 7.0 Limit Typ. Max. 400 200 -2.0 30.0 8.0 36 16 600 -3.5 20 Unit mA mS V V dBm dB % C/W Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: WG G.C.P.: Gain Compression Point Edition 1.1 July 1999 1 FLC107WG C-Band Power GaAs FET POWER DERATING CURVE 10 Total Power Dissipation (W) 8 6 4 2 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 400 300 200 100 VGS =0V -0.5V -1.0V -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 Drain Current (mA) Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER VDS=10V 31 IDS 0.6 IDSS P1dB & add vs. VDS f=8GHz IDS 0.6 IDSS Output Power (dBm) 6 GHz 8 GHz P1dB (dBm) 29 27 25 23 21 19 add Pout 31 30 29 P1dB add 50 40 30 add (%) 50 40 30 20 10 add (%) 6 GHz 8 GHz 12 14 16 18 20 22 Input Power (dBm) 8 9 10 Drain-Source Voltage (V) 2 FLC107WG C-Band Power GaAs FET +j50 +j25 10 9 8 S11 S22 +j100 +90 S21 S12 2GHz +j10 6 7 +j250 3 4 5 6 2GHz 73 94 10 9 7 10 5 10 0 4 3 10 9 8 7 6 5 25 50 100 250 180 4 3 2 1 .02 0 SCALE FOR |S21| 2GHz 43 -j10 SCALE FOR |S12| 2GHz -j250 .04 .06 .08 -j25 -j50 -j100 -90 FREQUENCY (MHZ) 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 S11 MAG .945 .912 .901 .897 .894 .890 .884 .871 .851 .841 .831 ANG -80.8 -121.7 -154.5 -168.3 -176.5 174.8 164.2 152.7 143.1 135.2 126.5 S-PARAMETERS VDS = 10V, IDS = 250mA S21 S12 MAG ANG MAG ANG 10.188 6.711 3.629 2.404 1.817 1.494 1.288 1.117 .968 .875 .854 131.0 103.4 73.4 54.1 38.7 24.1 8.7 -7.3 -21.1 -32.8 -44.2 .024 .031 .033 .031 .029 .029 .029 .030 .030 .034 .044 44.6 21.6 .3 -10.1 -14.0 -16.6 -17.9 -22.5 -15.8 -12.8 -10.3 S22 MAG .260 .277 .368 .469 .548 .601 .640 .676 .708 .737 .759 ANG -61.5 -91.4 -114.0 -124.2 -131.8 -139.3 -148.9 -160.1 -168.9 -175.2 179.6 Download S-Parameters, click here 3 FLC107WG C-Band Power GaAs FET Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11) 1 2.50.15 (0.098) 1.0 Min. (0.039) 2-O1.60.01 (0.063) 0.10.05 (0.004) 2 3 8.50.2 (0.335) 1.0 Min. (0.039) 0.5 (0.020) 0.80.1 (0.031) 2.5 Max. (0.098) 6.10.1 (0.240) 1. 2. 3. 4. Gate Source Drain Source 0.6 0.03 Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 |
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